QUBIT MODEL BASED ON A SEMICONDUCTIVE QUANTUM POINT WITH A CONTROLLED RELOCATION OF TWO-CENTRED WAVE FUNCTION IN EXTERNAL ELECTRIC FIELD

Krevchik Vladimir Dmitrievich, Doctor of physico-mathematical sciences, professor, head of physics sub-department, Penza State University, physics@pnzgu.ru
Razumov Aleksey Viktorovich, Candidate of physico-mathematical sciences, associate professor, sub-department of general physics, Penza State Pedagogical University named after V. G. Belinsky, physics@pnzgu.ru
Tyurin Evgeny Alexandrovich, Chief electronic engineer, sub-department of physics, Penza State University, physics@pnzgu.ru
Palchenkov Yuriy Dmitrievich, Candidate of engineering sciences, professor, sub-department of radio engineering and radio-electronic systems, Penza State University, physics@pnzgu.ru

539.23; 539.216.1

Studied theoretically for the quantum bit model of semiconductor quantum dot with D₂^-center with controlled external electric field of the relocation of two-center wave function. Orthonormal basis quantum bit |0>and |1>are selected in such a way as to conform to the localized electron states centered on the donor and the donor, biased to the border of CT. It is shown that the effect of relocation of the two-center wave function associated with the displacement of the center of gravity of the electron cloud as the energy (quantum-Stark effect) and to coordinate. The possibility of realization in such quantum bit quantum gate (NOT).

quantum bit, quantum dot, the effect of relocation of the two-center wave function, the terms, the range of photoexcitation.